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| HIP3TM Variable Attenuator 0.80-1.00 GHz AV111-12 Features I +40 dBm IP3 Typical I Low Loss 1 dB Typical I Attenuation 30 dB Typical I Good VSWR <1.5:1 Typical I Low Phase Shift SOI C-8 SOI C-8 Description The AV111-12 is a current controlled variable attenuator from Alpha's series of HIP3TM components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part. Electrical Specifications at 25C Parameter Frequency Insertion Loss (0 mA Control Current) Attenuation @ 1.2 mA Control Current (900 MHz) VSWR All Ports Input 3rd Order Intercept Relative Phase Shift Up to 20 dB Attenuation1 Group Delay +37 17.5 1.5 +40 7 0.4 10 0.9 Min. 0.80 1.0 Typ. Max. 1.0 1.5 21.5 1.8 dBm Deg. ns Unit GHz dB dB Operating Characteristics at 25C (0, +5 V) Parameter2 Switching Characteristics3 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru (Peak) Frequency Min. Typ. Max. 5 8 5 +15 Unit s s mV dBm Maximum Input Power for <1 dB Attenuation Variation 1. When built with external components as shown in the Pin Out diagram. 2. All measurements made in a 50 system, unless otherwise specified. 3. 0-4 mA square wave total control current. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/01A 1 HIP3TM Variable Attenuator 0.80-1.00 GHz AV111-12 Typical Performance Data 1.70 1.60 1.50 800 MHz 0 -5 -10 Attenuation (dB) -15 -20 -25 -30 -35 -40 -45 -50 1000 MHz 900 MHz 800 MHz 0 0.5 1.0 1.5 2.0 VSWR 1.40 1.30 1.20 900 MHz 1.10 1.00 0 0.5 1.0 1.5 2.0 2.5 3.0 1 GHz Current (mA) Current (mA) Input/Output VSWR vs. Current 24 20 0 -5 Attenuation vs. Current 0 mA 0.1 mA 0.5 mA -10 -15 -20 -25 -30 0.80 1.4 mA 1.00 0.9 mA Relative Phase Shift (Degrees) 1.4 mA 16 12 8 4 0 0.80 1.2 mA 1.0 mA 0.5 mA 0 mA 1.00 Attenuation (dB) 1.2 mA 0.84 0.88 0.92 0.96 0.85 0.90 0.95 Frequency (GHz) Frequency (GHz) Relative Phase vs. Frequency 25 20 15 5 0 -5 -10 -15 -20 -25 -35 0.01 -30 -25 -20 -15 -10 -5 0 400 800 MHz 10 100 Attenuation vs. Frequency Relative Phase Shift (Degrees) 1000 MHz 900 MHz 10 Current (mA) 1 0.1 500 600 700 800 900 1000 Attenuation (dB) Voltage (V) Relative Phase vs. Attenuation Typical PIN Diode Current vs. Voltage 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/01A HIP3TM Variable Attenuator 0.80-1.00 GHz AV111-12 Pin Out 680 Connection Diagram RF OUT 220 pF 220 pF 100 nH CONTROL CURRENT GND RF IN CONTROL CURRENT CONTROL CURRENT 100 nH CONTROL CURRENT GND 1 2 3 4 8 7 6 GND GND RF In RF Out 5 SOIC-8 PIN 8 0.050 (1.27 mm) BSC Absolute Maximum Ratings Characteristic RF Input Power Control Current Operating Temperature Storage Temperature Maximum Reverse Diode Voltage Electrostatic Discharge Value 0.5 W CW, 4 W @ 12.5% Duty Cycle 50 mA per Diode -65 to +125C -65 to +125C -100 V +125 V 0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 0.068 (1.73 mm) MAX. PIN 1 INDICATOR 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45 CHAMFER Note: Operating this device above any of these parameters may cause irreversible damage. 8 MAX. Recommended Board Layout SK38531 RF In/Out RF In/Out 20 mil Diameter Ground Via 0.018 Pin 1 22 nH 120 pF Material is 10 mil FR4. AV10-12 680 Bias Input Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 6/01A 3 |
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